Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys

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We report a systematic investigation of the effect of ion bombardment during the growth of amorphous silicon-germanium alloy films from silane and germane rf-glow discharge. Independent control of the plasma and the ion flux and energy is obtained by using a triode configuration. The ion contribution to the total deposition rate can reach 20% on negatively biased substrates. Although the Si and Ge composition of the film does not depend on the ion flux and energy, the optical, structural and electronic properties are drastically modified at low deposition temperatures when the maximum ion energy increases up to 50 eV, and remain constant above 50 eV. For a Ge atomic concentration of 37% and a temperature of 135°C, the optical gap decreases from 1.67 to 1.45 eV. This is correlated with a modification of hydrogen bonding configurations. Silicon dihydride sites disappear and preferential attachment of hydrogen to silicon is reduced in favour of germanium. Moreover the photoconductivity increases which shows that ion bombardment is a key parameter to optimize the quality of low band gap amorphous silicon-germanium alloys.
1989-01-20