Absence of Correlation between Disorder and Defect Density in Hydrogenated Amorphous Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-03-01
著者
-
MATSUDA Akihisa
Electrotechnical Laboratory
-
Ganguly Gautam
Electrotechnical Laboratory
-
Sakata I
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Sakata Isao
Electron Devices Division Electrotechnical Laboratory
-
OKUSHI Hideo
Electrotechnical Laboratory
関連論文
- Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
- Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
- Effect of Laser-Induced Dissociation during Measurements of Hydrogen Atoms in Silane Plasmas Using Two-Photon-Excited Laser-Induced Fluorescence
- Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- In Situ Hydrogenation of Amorphous Silicon Prepared by Thermal Decomposition of Disilane
- Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination Studied by a Constant Photocurrent Method
- Constant-Photocurrent-Method (CPM) Studies on Light-Induced Changes in Hydrogenated Amorphous Silicon
- Origin of the Reduction of Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination
- Effect of Visible-Light Illumination on the Growing Surface of an a-Si:H Film in Plasma Decomposition of SiH_4
- Re-Examination of Carrier Trapping Models for Light-Induced Changes in Hydrogenated Amorphous Silicon
- Minority Carrier Lifetime in Laser Recrystallized Polysilicon
- Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate Conditions
- Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Deposition on Subsequent in-situ Hydrogenation Processes
- Relationship between Carrier Diffusion Length and Light-Induced Defects in Hydrogenated Amorphous Silicon
- Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
- Spectroscopic Ellipsometry for the Identification of Paracrystallites in the Ultra-Thin Thermal CVD Hydrogenated Amorphous Silicon Films
- Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
- Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
- ^2D and ^1H Nuclear Magnetic Resonance Study of Deuterated Amorphous Silicon and Partially Deuterated Hydrogenated Amorphous Silicon
- ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
- Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
- Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
- Anomalous Optical and Structural Properties of B-Doped a-Si:H
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Boron Doping of Hydrogenated Silicon Thin Films
- ^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
- Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
- Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
- Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
- The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
- SiH_3 Radical Density in Pulsed Silane Plasma
- Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane
- In Situ Ultraviolet Laser Treatment during Plasma Deposition for the Improvement of Film Qualities in Hydrogenated Amorphous Silicon
- Absence of Correlation between Disorder and Defect Density in Hydrogenated Amorphous Silicon
- Optical and Electrical Properties of β-FeSi_2/Si, β-FeSi_2/InP Heterojunction Prepared by RF-Sputtering Deposition
- Simple Analytical Methods for Determining Optical Constants of Thin Films : Their Application to Amorphous Silicon
- Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
- Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
- Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon
- Electrical Properties of Pulsed Laser Crystallized Silicon Films
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
- Importance of Charged Dangling Bonds in Explaining the Photodegradation Behavior of Amorphous Silicon Films Prepared by Various Techniques
- Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited μc-Si:H
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
- A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
- Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys
- Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
- Influence of Power-Source Frequency on the Properties of GD a-Si:H
- Glow-Discharge Deposition of a-Si: H from Pure Si_2H_6 and Pure SiH_4
- Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High Temperatures
- Control of defect density in a-Si : H by surface processes
- Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane