Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-01-15
著者
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Xu J
Institute Of Advanced Materials Fudan University
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MATSUDA Akihisa
Electrotechnical Laboratory
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Ganguly Gautam
Electrotechnical Laboratory
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XU Jun
National Food Research Institute
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Xu J
Akita Univ. Akita Jpn
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Xu J
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Chen Kouth
State Key Laboratory Of Solid State Microstrucrures And Department Of Physics Nanjing University
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HUANG Shaoyun
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
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CHEN Kunji
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
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SHI Jianjun
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
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HUANG Xinfan
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University
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