Influence of Power-Source Frequency on the Properties of GD a-Si:H
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概要
- 論文の詳細を見る
The influence of power-source frequency on the film properties of glow-discharge (GD) amorphous silicon has been studied in the range from 10 kHz to 50 MHz. Mechanical property, rather than photoelectric properties of the film, is highly influenced by the frequency, i.e., compressive internal stress is stored in the film when deposited from SiH_4 plasma operated by a frequency lower than 500 kHz. It has been demonstrated through mass spectrometric measurements that the internal stress is caused by ion bombardment on the growing surface of the film.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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MATSUDA Akihisa
Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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Matsuda A
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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KAGA Takao
Electrotechnical Laboratory
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TANAKA Hideo
Electrotechnical Laboratory
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TANAKA Hideo
Electrotechnical Laboratory:(Present address)SEIKO Instruments and Electronics Ltd.
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