Density of Mid-Gap States for Undoped a-Si_<1-x>Ge_x:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method : Electrical Properties of Condensed Matter

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概要

• 論文の詳細を見る

• A simple technique has been described for determining the density of mid-gap states of highly resistive amorphous semiconductors, using amorphous / srystalline heterojunction structures. The technique has been tested and applied on undoped hydrogenated amorphous silicon films and silicon-germanium alloy films, corvering the optical gap range of 1.30 to 1.76 eV. Those densities obtained from this technique have been found to be densities of singly-occupied dangling bonds.

• 社団法人応用物理学会の論文
• 1988-04-20

著者

• MATSUURA Hideharu

  Electrotechnical Laboratory

関連論文

• Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
• Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys
• Density of Mid-Gap States for Undoped a-Si_Ge_x:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method : Electrical Properties of Condensed Matter
• Density-of-State Distribution for Undoped a-Si:H and a-Si_Ge_x:H Determined by Transient Heterojunction-Monitored Capacitance Method : Electrical Properties of Condensed Matter

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