Density-of-State Distribution for Undoped a-Si:H and a-Si_<1-x>Ge_x:H Determined by Transient Heterojunction-Monitored Capacitance Method : Electrical Properties of Condensed Matter

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概要

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• A novel Technique has been proposed for determining the density-of-state (DOS) distrubution in the mobility gap of highly resistive amorphous semiconductors, using amorphous / crystalline heterojunction structures. This technique has been tested and applied on undoped hydrogenated amorphous silicon (a-Si:H) films and silicon-germanium alloy (a-Si_<1-x>Ge_x:H) films, covering the optical gap range(E_0) of 1.55 eV to 1.76 eV. For undoped a-Si:H (E_0=1.76eV), the peak of the mid-gap DOS distribution has been located at 0.85 eV below the conduction band mobility edge, with a value of 5.6×10^<15> cm^<-3>eV^<-1>

• 社団法人応用物理学会の論文
• 1988-04-20

著者

• MATSUURA Hideharu

  Electrotechnical Laboratory

関連論文

• Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
• Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys
• Density of Mid-Gap States for Undoped a-Si_Ge_x:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method : Electrical Properties of Condensed Matter
• Density-of-State Distribution for Undoped a-Si:H and a-Si_Ge_x:H Determined by Transient Heterojunction-Monitored Capacitance Method : Electrical Properties of Condensed Matter

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