MATSUURA Hideharu | Electrotechnical Laboratory
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概要
関連著者
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MATSUURA Hideharu
Electrotechnical Laboratory
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MATSUDA Akihisa
Electrotechnical Laboratory
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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TANAKA Kazunobu
Electrotechnical Laboratory
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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Yamasaki S
Nec Corp. Kanagawa Jpn
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Hata N
Electrotechnical Lab. Ibaraki Jpn
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Hata Nobuhiro
Electrotechnical Laboratory
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OKUNO Tetsuhiro
Electrotechnical Laboratory
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OKUSHI Hideyo
Electrotechnical Laboratory
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YAMASAKI Satoshi
Electrotechnical Laboratory
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OHEDA Hidetoshi
Electrotechnical Laboratory
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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OHYAMA Hideaki
Electrotechnical laboratory
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Okuno Tetsuhiro
Electrotechnical Laboratory:sharp Corporation
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Perrin Jérôme
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305
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Perrin Jérôme
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305
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Takeda Yoshihiko
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305
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Hirano Naoto
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305
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Matsuda Akihisa
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305
著作論文
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys
- Density of Mid-Gap States for Undoped a-Si_Ge_x:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method : Electrical Properties of Condensed Matter
- Density-of-State Distribution for Undoped a-Si:H and a-Si_Ge_x:H Determined by Transient Heterojunction-Monitored Capacitance Method : Electrical Properties of Condensed Matter