Yamasaki Satoshi | Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research

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著作論文

In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth On Si(111)
EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites
Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process
Effects of Chemical Composition and Morphology of Substrate Surfaces on Crustallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films
Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon
Electron-spin-resonance center of dangling bonds in undoped a-Si:H
Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication
Electronic Structure of Band-Tail Electrons in a Si:H
Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
Fabrication of High-Quality Nb/Al-AlO_x-Al/Nb Junctions by a Simple Process
Fabrication and Evaluation of Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
Performance Evaluation of Representative Figure Method for Proximity Effect Correction
Representative Figure Method for Proximity Effect Correction [II]
Representative Figure Method for Proximity Effect Correction
Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
Anomalous Optical and Structural Properties of B-Doped a-Si:H
Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
Boron Doping of Hydrogenated Silicon Thin Films
^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
Comparative Evaluation of Ultrathin Mask Layers of SiO_2, SiO_x, and SiN_x for Selective Area Growth of Si
Scanning Probe Microscopy and Lithography of Ultrathin Si_3N_4 Films Grown on Si(111) and Si(001)
Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES

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