In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth On Si(111)
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We report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center density reached around 2.5–3.0×1012 cm-2, which is the same density as in the case of thick SiO2. This result shows that the Pb center density does not originate from the long-range accumulation of the structural stress between two materials, but from the chemical reactions of oxidation within a few Si atomic layers.
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