Hata Nobuhiro | Electrotechnical Laboratory
スポンサーリンク
概要
関連著者
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MATSUDA Akihisa
Electrotechnical Laboratory
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Hata N
Electrotechnical Lab. Ibaraki Jpn
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Hata Nobuhiro
Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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Matsuda A
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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Osborne Ian
Electrotechnical Laboratory
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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OKUSHI Hideyo
Electrotechnical Laboratory
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YAMASAKI Satoshi
Electrotechnical Laboratory
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OHEDA Hidetoshi
Electrotechnical Laboratory
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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OHYAMA Hideaki
Electrotechnical laboratory
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Ganguly G
Electrotechnical Lab. Ibaraki Jpn
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Yamasaki S
Nec Corp. Kanagawa Jpn
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Ganguly Gautam
Electrotechnical Laboratory
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MATSUURA Hideharu
Electrotechnical Laboratory
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OKUNO Tetsuhiro
Electrotechnical Laboratory
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KAJIYAMA Koichi
Technical Research Center, Komatsu Ltd.
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MORO Norio
Technical Research Center, Komatsu Ltd.
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SAJIKI Kazuaki
Technical Research Center, Komatsu Ltd.
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Moro Norio
Technical Research Center Komatsu Ltd.
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Sajiki Kazuaki
Technical Research Center Komatsu Ltd.
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Okuno Tetsuhiro
Electrotechnical Laboratory:sharp Corporation
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Kajiyama Koichi
Technical Research Center Komatsu Ltd.
著作論文
- Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
- Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
- Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
- The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition