IKUTA Kazuyuki | Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research
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概要
- 同名の論文著者
- Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Researchの論文著者
関連著者
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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TANAKA Kazunobu
Joint Research Center for Atom Technology(JRCAT)
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IKUTA Kazuyuki
Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research
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Yamasaki S
Nec Corp. Kanagawa Jpn
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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Ikuta K
Department Of Electronic Device Engineering Graduate School Of Information Science And Electrical En
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Yamasaki Satoshi
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Tanaka Kazunobu
Joint Research Center For Atom Technology (jrcat):national Institute For Advanced Interdisciplinary
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Yamasaki Satoshi
Joint Research Center For Atom Technology (jrcat) National Institute For Advanced Interdisciplinary
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YASUDA Tetsuji
Joint Research Center for Atom Technology (JRCAT)
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HWANG Doo-Sup
Joint Research Center for Atom Technology-Angstrom Technology Partnership
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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Yasuda T
Joint Research Center For Atom Technology (jrcat)
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Yasuda Tetsuji
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Yasuda Tetsuji
Joint Research Center For Atom Technolog (jrcat)
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Yasuda T
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Yasuda Takeshi
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Sciences
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Yasuda Tsutomu
Faculty Of Engineering Tokyo Institute Of Technology
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MATSUDA Akihisa
Electrotechnical Laboratory
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TOYOSHIMA Yasutake
Electrotechnical Laboratory
著作論文
- Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication
- Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
- Comparative Evaluation of Ultrathin Mask Layers of SiO_2, SiO_x, and SiN_x for Selective Area Growth of Si