Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films"

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概要

• 論文の詳細を見る

• Scanning isothermal current transient spectroscopy (SICTS) is proposed for the microscopic deep-level distribution measurement in semiconductors and applied to the spatial distribution measurement of gap states in hydrogenated amorphous silicon films.

• 社団法人応用物理学会の論文
• 1989-06-20

著者

• OKUSHI Hideyo

  Electrotechnical Laboratory

• Tokumaru Yozo

  Chuo University

• NAKA Hiroyoshi

  Micronics Japan Co., Ltd.

• Naka Hiroyoshi

  Micronics Japan Co. Ltd.

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