Junction Properties and Gap States in Nb-Doped TiO_2 Thin Films
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概要
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Nb-doped TiO_2 thin films were successfully prepared on p-type crystalline Si substrates using the sol-gel process. The current-voltage (I-V) characteristics of the heterojunctions between TiO_2 and Si show a rectification and the capacitance-voltage (C-V) characteristics an approximate linear C^<-2>-V relationship in the reverse-bias condition. By application of an isothermal capacitance transient spectroscopy (ICTS) method on these junction diodes, it is found that two gap states are located at 0.027 eV and 0.22 eV below the conduction band edge (E_c).
- 社団法人応用物理学会の論文
- 1993-03-15
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