Carrier Transport in p^+-v Junction Based on Relaxation Semiconductors. II. Experiment
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Experimental I-V characteristics of p^+-v-n diodes, whose v region is chromium doped relaxation-case GaAs, are presented for a crucial check of the theory developed in a previous paper. Transient carrier transport phenomena in the relaxation regime are also illustrated using the present diodes. The forward characteristic of the diode exhibits an extended linear region at low field, which is followed by non-linear region, I∝(V/V_a+V_a/V)V^<1/2>, where V_a is a coinstant value and V is the applied voltage. In the reverse characteristic, a linear region (S=dlog I/dlog V=1), a sublinear region (S≃0.5), a nearly linear region (S≃1) and a superlinear region (S>1) are observed in turn as V increases. The reverse transient characteristic is evidence for the existence of hole-trapping levels with a density of about 10^<15>/cm^3 and a hole lifetime of 10^<-9> sec. These results are consistent with our theory.
- 社団法人応用物理学会の論文
- 1979-04-05
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