Deep Levels Associated with Nitrogen in Silicon
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概要
- 論文の詳細を見る
Two deep levels at E_c-0.19 eV and E_c-0.28 eV are found in nitrogen-doped silicon, in which nitrogen is doped during crystal growth by the float-zone method. The E_c-0.19 eV level has an electron capture cross section of 8×10^<-17> cm^2 and the E_c-0.28 eV level has that of 5×10^<-16> cm^2. The concentrations of the former and latter levels are about 0.1 and 0.01% of the doped nitrogen concentration (〜10^<15> cm^<-3>), respectively.
- 社団法人応用物理学会の論文
- 1982-07-20
著者
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ABE Takao
Shin-Etsu Handotai Company, Limited
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OKUSHI Hideyo
Electrotechnical Laboratory
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Abe Takao
Shin-etsu Handotai
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TOKUMARU Yozo
Electrotechnical Laboratory
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MASUI Tsumoru
Shin-Etsu Handotai Co. Ltd.
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Abe Takao
Shin-etsu Handotai Co. Ltd.
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