Photoluminescence Associated with Nitrogen in Silicon
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概要
- 論文の詳細を見る
A new photoluminescence line at 1.1223±0.0001 eV has been observed for the first time in nitrogen-doped silicon crystals. This line never appears unless the crystal is intentionally doped with nitrogen. The relative intensity or the line increases with nitrogen concentration. These results show that the luminescence center responsible for the 1.1223-eV line is associated with nitrogen.
- 社団法人応用物理学会の論文
- 1981-06-05
著者
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Tajima Michio
Electrotechnical Laboratory
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Abe Takao
Shin-etsu Handotai
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Nozaki Tadashi
Institute Of Physical And Chemical Research
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Nozaki Tadashi
Institute For Nuclear Study University Of Tokyo:the Electrical Communication Laboratory
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MASUI Tsumoru
Shin-Etsu Handotai Co. Ltd.
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Abe Takao
Shin-etsu Handotai Co. Ltd
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