Deep-Level Luminescence in Czochralski-Grown Silicon Crystals after Long-Term Annealing at 450℃

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-04-15

著者

• TAJIMA Michio

  Institute of Space and Astronautical Science/JAXA

• NAGASAKA Keigo

  Department of Physics,Faculty of Science,Science University of Tokyo

• Tajima M

  Inst. Space And Astronautical Sci. Sagamihara Jpn

• Tajima Michio

  Optoelectronics Joint Research Laboratory

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• Nagasaka K

  Sci. Univ. Tokyo Tokyo

• Nagasaka K

  Department Of Physics Science University Of Tokyo

• Nagasaka Keigo

  Department Of Material Physics Faculty Of Engineering Science Osaka University

• IBUKA Shigeo

  Institute of Space and Astronautical Science

• WARASHINA Masatoshi

  Institute of Space and Astronautical Science

• TAKENO Hiroshi

  Shin-Etsu Handotai Company, Limited

• ABE Takao

  Shin-Etsu Handotai Company, Limited

• Abe Takao

  Shin-etsu Handotai

• Nagasaka Keigo

  Depanment Of Physics Faculty Of Science Science University Of Tokyo

• Ibuka S

  Inst. Space And Astronautical Sci. Sagamihara Jpn

• Takeno Hiroshi

  Shin-etsu Handotai Company Limited

• Takeno Hiroshi

  Shin-etsu Handotai

• Warashina M

  Institute Of Space And Astronautical Science

• Warashina Masatoshi

  Institute Of Space And Aeronautical Science University Of Tokyo

• Tajima Michio

  Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo:(present Address) El

関連論文

• Fine Structure Due to Donor-Acceptor Pair Luminescence in Compensated Si
• Spin Polarization Dependent Far Infrared Absorption in Ga_Mn_xAs : Semiconductors
• Submillimeter Wave ESR Study of Magnetic Excitations in the Ising Ferromagnetic Chain CoNb_2O_6
• Investigation of Phonon Anomaly in the Orbital Order State of La_Sr_xMnO_3 (x〜1/8) : Condensed Matter: Electronic Properties, etc.
• Analysis of Effective Interaction Length for Crossing Beams in a Para-Hydrogen Raman Laser
• Short-Pulse Generation in the Transient Raman Regime with a Parahydrogen Raman Laser
• Shallow Donor Complex in Annealed Si
• Transmission Spectroscopy in the Range 3 to 500 cm^-1 in a Superconductor Crystal Bi-Sr-Ca-Cu-O : Electrical Properties of Condensed Matter
• Far-Infrared Study of Bi-Sr-Ca-Cu-O Thin Films on MgO Substrates
• Far-Infrared Photoconductivity and Photo-Hall Effects in Antimony Doped Germanium
• Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
• Deep-Level Luminescence in Czochralski-Grown Silicon Crystals after Long-Term Annealing at 450℃
• High-Resolution Hadamard Transform Spectrometer Using a High-Precision Encoding Mask
• Hybridized Mode of Phonon and Spin-Cluster Excitation in Quasi-One-Dimensional Magnet CoNb_2O_6
• Efficient and Long-Lived Green Light-Emitting Diodes Based on ZnSSe:Te Active Layer
• Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
• Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
• Wideband Tuning of a High-Pressure CO_2 Laser by means of Intracavity Active Frequency Shift
• Annular-Beam Pumped Para-Hydrogen Raman Laser
• Far Infrared Measurements in High-T_c Superconductor Sr_xLa_CuO_
• Far-Infrared Germanium Detectors
• Long-Running-Time (T=0.45 K) Germanium Bolometer for Far Infrared Spectroscopy
• Observation of a Soft Mode Phonon in MEM (TCNQ)_2 below Spin-Peierls Transition by Far Infrared Spectroscopy
• Photon-Induced Hopping in High-T_c Superconductors
• Photon-Induced Hopping in Bi_2Sr_2Ca_Y_Cu_2O_y
• Wide-Band Frequency Response Measurements of IR and FIR Detectors by Diode-CO_2 Laser Heterodyne Detection
• Study of Cryclotron Resonance for Ellipsoidal Energy Surface by Circularly Polarized Light
• A Technique for Measurement of Far-Infrared Cyclotron Resonance in Intense Pulsed Magnetic Field
• Effect of Impurity Interaction upon Ionization Energy of Donor-Electrons in Germanium
• Optical Measurements and Band Calculations of FeSi
• Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography
• Mierodefects in an As-Grown Czoehralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
• Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography
• The Nature of Nitrogen-Oxygen Complexes in Silicon
• Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals
• Photoquenching and Recovery Effects of EL2 Absorption in GaAs : Optical Properties of Condensed Matter
• Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
• The Effects of Polishing Damage and Oxygen Concentration on Gate Oxide Integrity in Silicon Crystals
• Magneto-Optical Study of Reduced Deimensionality and Quantum Confinement in CdTe/MnTe Multiple Quantum Wells
• Growth and Magneto-Optic Properties of CdTe/Cd_Mn_xTe Multiple Quantum Wells
• Persistent Photoconductivity (PPC) and Related Deep Metastable Center in MBE Grown p-Type ZnMgSSe
• Shallow-Deep Transition of Nitrgen Acceptor in Blue Semiconductor Laser Material ZnMgSSe
• Newly Packaged 50-μm-Spaced 8-Element Laser Diode Array with a Thermoelectric Cooler
• Theoretical and Experimental Evaluation of the Effect of Adding a Heat-Bypass Structure to a Laser Diode Array
• Fabrication and Bonding Strength of Bonded Silicon-Quartz Wafers
• Improvement in Lasing Properties of an Integrated flying Optical Head with a Diamond-Film-Coated Slider : Head Technology
• Improvement in Lasing Properties of an Integrated Flying Optical Head with a Diamond-Film-Coated Slider
• Surface Impurities Encapsulated by Silicon Wafer Bonding
• Silicon Wafer Bonding Mechanism for Silicon-on-Insulator Structures
• Extended AC Conductance-Bias Method Considering Semiconductor Conductance and Capacitance in MOS Structure
• A Single-Shot Transient-Grating Autocorrelator for the Measurement of Femtosecond Laser Pulses in the Ultraviolet
• Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
• Delay Time of THz Wave Emission after Ultrafast Excitation in n-GaAs
• Development of a wide bandwidth heterodyne detector using a photoconductive element
• Optical Properties of Zinc Telluride in the Infrared
• Characterization of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement
• Photoluminescence Mapping System Applicable to 300 mm Silicon-on-Insulator Wafers : Instrumentation, Measurement, and Fabrication Technology
• Characterization of Interface in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face
• Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
• Far-Infrared Transmission Measurements of N-Methyl-N-Ethy-Morpholinium-Ditetracyanoquinodimethanide[MEM (TCNQ)_2] at Temperatures above and below Spin-Peierls Transition
• Deep Levels Associated with Nitrogen in Silicon
• Dislocation-Free Silicon on Sapphire by Wafer Bonding
• Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
• Highly Sensitive Optical Method for the Characterization of SiO_2 Films in Bonded Wafers
• Mapping of Vanadium-Related Luminescence on SiC Wafer at Room Temperature
• Spectral Shape Analysis of Photoluminescence Excitation in Semiconductors
• Far-Infrared Cyclotron Resonance of Piezoelectric Polarons in CdS at 77°K
• Avalanche Injection Effects in MIS Structures and Realization of N-Channel Enhancement Type MOS FETS
• 2-Dimensional Parameter Conductance Method for Estimation of Interface States in MIS Structure
• Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method
• Difference of Characteristics of a-si : H Solar Cells between under Illumination and Dark : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
• X-Ray Topographic Investigations on Bonded Silicon on Insulator (BESOI) Wafers
• Photoluminescence of Si_Ge_x/Si Quantum Well Structures
• Conductance(G)-Bias(L) Method for Interface States in MUS Structure
• Measuring Methods of Solar Cell Parameters Using Spectrum Response of Short-Circuit Current : I-3: CHARACTERIZATION OF SOLAR CELLS
• Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
• Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation
• Photoluminescence Associated with Nitrogen in Silicon
• Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
• Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation
• Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique : C-3: CRYSTAL TECHNOLOGY
• Phonon Sidebands in GaP : Bi
• Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding (Special Issue on Quarter Micron Si Device and Process Technologies)
• Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature
• Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
• Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping
• Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
• Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
• Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
• Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se2 Solar Cells
• Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
• Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
• Radiative Recombination Mechanism of EL2 Level in GaAs
• Photoluminescence Imaging of Multicrystalline Si Wafers during HF Etching
• Delay Time of THz Wave Emission after Ultrafast Excitation in n-GaAs
• A Single-Shot Transient-Grating Autocorrelator for the Measurement of Femtosecond Laser Pulses in the Ultraviolet
• The Performance of the Lithium-Ion Secondary Cells under Micro-Gravity Conditions—In-Orbit Operation of the Interplanetary Spacecraft 'HAYABUSA'
• Microroughness Measurements on Polished Silicon Wafers
• Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
• Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting

もっと見る 閉じる

スポンサーリンク