2-Dimensional Parameter Conductance Method for Estimation of Interface States in MIS Structure

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概要

• 論文の詳細を見る

• The MIS conductance method is important for estimating the interface state density in the Metal-Insulator-Semiconductor structure. There are at present two models for the density distribution. One is Goetzberger's model based on random distributions (with variance σ^2) of the interface charges along the interface, the other is Preier's model for the trap distributions (with attenuation constant α) along the depth in the insulator near the interface. However, it is found that either of the above parameters which should be constant varies with the measuring frequency. Therefore a new two-dimensional parameter model is proposed which gives good agreement with experiments. Each of the above models is found to be a special case with very large α or 0.6 for σ of the proposed model.

• 社団法人応用物理学会の論文
• 1973-03-05

著者

• USHIROKAWA Akio

  Institute of Space and Aeronautical Science, University of Tokyo

• Warashina Masatoshi

  Institute Of Space And Aeronautical Science University Of Tokyo

• NAGAMI Akira

  Institute of Space and Aeronautical Science University of Tokyo

• Nagami Akira

  Institute Of Space And Aeronautical Science University Of Tokyo:(present Address) Ic Division Nippon

• Ushirokawa Akio

  Institute Of Space And Aeronautical Science University Of Tokyo

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