Highly Sensitive Optical Method for the Characterization of SiO_2 Films in Bonded Wafers
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概要
- 論文の詳細を見る
The thickness of very thin films (1-10 nanometers thick) and the frequency of the longitudinal optical mode of the material composing the film (related to its chemical and structural properties) are demonstrated to be measurable with high sensitivity by means of infrared transmission. The particular optical configuration proposed permits the analysis of the SiO_2 film in bonded wafers. It is shown that the sensitivity of this new method increases as the films are made thinner.
- 社団法人応用物理学会の論文
- 1995-10-15
著者
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Borghesi Alessandro
Dipartimento Di Fisica Universita Degli Studi Di Modena
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ABE Takao
Shin-Etsu Handotai Company, Limited
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Abe Takao
Shin-etsu Handotai
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SASSELLA Adele
Dipartimento di Fisica "A. Volta", Universita degli Studi di Pavia
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Sassella Adele
Dipartimento Di Fisica "a. Volta" Universita Degli Studi Di Pavia
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