Avalanche Injection Effects in MIS Structures and Realization of N-Channel Enhancement Type MOS FETS
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概要
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The avalanche injection of hot carriers in MIS structures, especially the significant charging effects observed in thermally grown SiO_2 films are studied in detail. The good controllability of the charging effects is found, and it is shown that the usual n-channel (depletion mode) MOS FETs can be easily converted to the enhancement type with the low threshold voltage. The equations of the avalanche injection current and the shift of flat band voltage are developed and appear to be good agreement with experiments. The electron traps which cause the negative charging effects are the water-related neutral centers, and their densities are in the order of 10^<17>/cm^3 (p-type 1 Ω-cm substrate). The interface states density increases and the properties of Si-bulk are also influenced by the avalanche injection.
- 社団法人応用物理学会の論文
- 1973-03-05
著者
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USHIROKAWA Akio
Institute of Space and Aeronautical Science, University of Tokyo
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Warashina Masatoshi
Institute Of Space And Aeronautical Science University Of Tokyo
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Warashina Masatoshi
Institute Of Spece And Aeronautical Science University Of Tokyo
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SUZUKI Eiichi
Institute of Spece and Aeronautical Science University of Tokyo
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Ushirokawa Akio
Institute Of Space And Aeronautical Science University Of Tokyo
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Ushirokawa Akio
Institute Of Spece And Aeronautical Science University Of Tokyo
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