Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers

スポンサーリンク

概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-04-15

著者

• TAJIMA Michio

  Institute of Space and Astronautical Science/JAXA

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• IBUKA Shigeo

  Institute of Space and Astronautical Science

• Yoshida H

  Himeji Institute Of Technology

• YOSHIDA Haruhiko

  Himeji Institute of Technology

• KISHINO Seigo

  Himeji Institute of Technology

関連論文

• Fine Structure Due to Donor-Acceptor Pair Luminescence in Compensated Si
• Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
• Deep-Level Luminescence in Czochralski-Grown Silicon Crystals after Long-Term Annealing at 450℃
• Photoquenching and Recovery Effects of EL2 Absorption in GaAs : Optical Properties of Condensed Matter
• Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
• Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
• Characterization of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement
• Photoluminescence Mapping System Applicable to 300 mm Silicon-on-Insulator Wafers : Instrumentation, Measurement, and Fabrication Technology
• Characterization of Interface in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face
• Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
• Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
• Mapping of Vanadium-Related Luminescence on SiC Wafer at Room Temperature
• Spectral Shape Analysis of Photoluminescence Excitation in Semiconductors
• Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method
• Photoluminescence of Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
• Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation
• Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
• Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation
• Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature
• Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
• Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping
• Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
• Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
• Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
• Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se2 Solar Cells
• Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
• Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
• Photoluminescence Imaging of Multicrystalline Si Wafers during HF Etching
• The Performance of the Lithium-Ion Secondary Cells under Micro-Gravity Conditions—In-Orbit Operation of the Interplanetary Spacecraft 'HAYABUSA'
• Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
• Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting

もっと見る 閉じる

スポンサーリンク