Fine Structure Due to Donor-Acceptor Pair Luminescence in Compensated Si

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概要

• 論文の詳細を見る
• 2010-07-25

著者

• TAJIMA Michio

  Institute of Space and Astronautical Science/JAXA

• IWAI Takaaki

  Institute of Space and Astronautical Science/JAXA

• TOYOTA Hiroyuki

  Institute of Space and Astronautical Science/JAXA

• BINETTI Simona

  CNISM and Department of Material Science, University of Milano-Bicocca

• MACDONALD Daniel

  School of Engineering, The Australian National University

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• Binetti Simona

  Cnism And Department Of Material Science University Of Milano-bicocca

• Macdonald Daniel

  School Of Engineering The Australian National University

• Toyota Hiroyuki

  Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency

関連論文

• Fine Structure Due to Donor-Acceptor Pair Luminescence in Compensated Si
• Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
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• Characterization of Interface in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face
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• Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
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