Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se2 Solar Cells

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概要

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• We investigated proton irradiation effects on Cu(In,Ga)Se2 (CIGS) solar cells with a structure of ZnO/CdS/CIGS using photoluminescence (PL) spectroscopy. After proton irradiation, near band-edge emission from the CIGS layer was considerably reduced, while deep-level emission emerged at 0.8 eV. Subsequent annealing restored the intensity of the near band-edge emission slightly, and reduced the 0.8 eV band substantially. An anomalous spectral variation caused by the annealing suggests that the 0.8 eV band does not originate from a single irradiation-induced defect. After the irradiation, the 1.35 eV emission from the CdS layer was moderately reduced, and the band-edge emission from the ZnO layer had disappeared. These bands recovered to the initial state after the annealing. Qualitative correlation was observed between the PL properties and the electrical properties of the cell.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-02-25

著者

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• SAKURAI Keiichiro

  National Institute of Advanced Industrial and Science Technology

• NIKI Shigeru

  National Institute of Advanced Industrial and Science Technology

• Hirose Kazuyuki

  Institute Of Space And Astronautical Science

• Kawakita Shirou

  Institute of Aerospace Technology, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan

• Yoshida Kazuki

  Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan

• Niki Shigeru

  National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Hirose Kazuyuki

  Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan

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