Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique (Special Issue : Solid State Devices and Materials (2))
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Hirose Kazuyuki
Institute Of Space And Astronautical Science
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Seki Hiroshi
School of Science for Open and Environmental System, Graduate School of Science and Technology, Keio University, Yokohama 223-8522, Japan
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Shibuya Yasuhiro
Electrical and Electronic Engineering, Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Kobayashi Daisuke
Institute of Space and Astronautical Science, JAXA, Sagamihara 252-5210, Japan
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Nohira Hiroshi
Electrical and Electronic Engineering, Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Yasuoka Kenji
School of Science for Open and Environmental System, Graduate School of Science and Technology, Keio University, Yokohama 223-8522, Japan
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- Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique (Special Issue : Solid State Devices and Materials (2))
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