Nohira Hiroshi | Electrical and Electronic Engineering, Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan

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概要

関連著者

Hirose Kazuyuki
Institute Of Space And Astronautical Science
Seki Hiroshi
School of Science for Open and Environmental System, Graduate School of Science and Technology, Keio University, Yokohama 223-8522, Japan
Shibuya Yasuhiro
Electrical and Electronic Engineering, Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan
Kobayashi Daisuke
Institute of Space and Astronautical Science, JAXA, Sagamihara 252-5210, Japan
Nohira Hiroshi
Electrical and Electronic Engineering, Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan
Yasuoka Kenji
School of Science for Open and Environmental System, Graduate School of Science and Technology, Keio University, Yokohama 223-8522, Japan

著作論文

Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique (Special Issue : Solid State Devices and Materials (2))

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