Efficiency Enhancement of Cu(In,Ga)Se2 Solar Cells Fabricated on Flexible Polyimide Substrates using Alkali-Silicate Glass Thin Layers
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概要
- 論文の詳細を見る
Cu(In,Ga)Se2 (CIGS) absorber layers were grown at a maximum substrate temperature of 400 °C on polyimide (PI) films. The PI films were formed by spin-coating on glass substrates. Alkali doping into the CIGS layers was demonstrated using alkali-silicate glass thin layers (hereafter called ASTL) deposited on PI films prior to the sputtering of the Mo back contact layer. The quantum efficiency curves of CIGS solar cells fabricated with use of ASTL showed an enhanced absorption in the long wavelength region. Using the ASTL method, the cell efficiency of 14.7% has been demonstrated on PI substrate.
- Japan Society of Applied Physicsの論文
- 2008-09-25
著者
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NIKI Shigeru
National Institute of Advanced Industrial and Science Technology
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Niki Shigeru
National Institute Of Advanced Industrial Science And Technology (aist)
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Ishizuka Shogo
National Institute Of Advanced Industrial Science And Technology (aist)
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Ishizuka Shogo
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Hommoto Hiroyuki
Iwakuni Factory, TEIJIN Ltd., 2-1 Hinodecho, Iwakuni, Yamaguchi 740-8511, Japan
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Kido Nobuaki
TEIJIN Ltd., 3-2-1 Kasumigaseki, Chiyoda-ku, Tokyo 100-8585, Japan
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Hashimoto Kimikazu
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Iba
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Yamada Akimara
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Iba
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Kido Nobuaki
Teijin Ltd.
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Yamada Akimara
National Institute Of Advanced Industrial Science And Technology (aist)
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Hommoto Hiroyuki
Iwakuni Factory Teijin Ltd.
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Hashimoto Kimikazu
National Institute Of Advanced Industrial Science And Technology (aist)
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- Efficiency Enhancement of Cu(In,Ga)Se2 Solar Cells Fabricated on Flexible Polyimide Substrates using Alkali-Silicate Glass Thin Layers
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