Excitation-Power Dependence of Free Exciton Photoluminescence of Semiconductors
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概要
- 論文の詳細を見る
We have derived an analytical formula for the excitation-power dependence of the free exciton photoluminescence (PL) intensity. It has been found that the PL intensity $I$ depends on the power of the excitation laser $L$ as $I\propto L^{k}$, where $k$ is the power index. We have deduced the analytical formula that describes the value of $k$ for the free exciton PL emission under the above-band-gap excitation conditions. The results indicate that the value of $k$ is in the region of $1<k<2$ depending on both the value of $L$ and material properties such as radiative and competitive nonradiative recombination probabilities.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-08-15
著者
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YAMADA Akimasa
National Institute of Advanced Industrial and Science Technology
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SAKURAI Keiichiro
National Institute of Advanced Industrial and Science Technology
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MATSUBARA Koji
National Institute of Advanced Industrial and Science Technology
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Sakai Masamichi
Faculty Of Engineering Saitama University
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SHIBATA Hajime
National Institute of Advanced Industrial Science and Technology
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Ishizuka Shogo
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Sakurai Keiichiro
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shibata Hajime
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Tampo Hitoshi
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Kim Kyoung-Kook
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Niki Sigeru
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Sakai Masamichi
Faculty of Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
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Matsubara Koji
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ishizuka Shogo
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yamada Akimasa
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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