Abrupt Change in Surface Fermi Level of P-Type InP upon Annealing

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概要

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• The influence of annealing on the room-temperature Fermi level of (1OO) surface of p-type InP was investigated by photoreflectance and photoluminescence spectroscopy. An abrupt change in surface Fermi level from 0.20±0.05 eV to 1.23±0.05 eV was observed at an annealing temperature of 220℃. The abrupt change in surface Fermi level can possibly be attributed to thermal dissociation of In and/or P which may act as trapping centers of n-channel electrons in InP-metal-insulator-semiconductor field-effect transistors.

• 社団法人応用物理学会の論文
• 2002-02-28

著者

• Sakai Masamichi

  Faculty Of Engineering Saitama University

• Kurayama Tetsuo

  Faculty Of Engineering Saitama University

• SANO Gennki

  Faculty of Engineering, Saitama University

• Sano Gennki

  Faculty Of Engineering Saitama University

関連論文

• Electrical Transport and Optical Properties of Hydrogen-Deficient YH_2 Films
• Abrupt Change in Surface Fermi Level of P-Type InP upon Annealing
• Electrical Transport and Optical Properties of Hydrogen-Deficient YH2 Films
• Excitation-Power Dependence of Free Exciton Photoluminescence of Semiconductors

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