Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• OGURA Atsushi

  Silicon Systems Research Laboratories, NEC Corporation

• Ogura Atsushi

  Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan

関連論文

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• Photoquenching and Recovery Effects of EL2 Absorption in GaAs : Optical Properties of Condensed Matter
• Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
• Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
• Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
• Evaluation of SOI Substrates by Positron Annihilation
• Characterization of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement
• Photoluminescence Mapping System Applicable to 300 mm Silicon-on-Insulator Wafers : Instrumentation, Measurement, and Fabrication Technology
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• Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
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• Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
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• Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
• Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation
• Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures
• Measurement of As and B Profiles Implanted into SOI Substrates
• Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature
• Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
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• Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
• Evaluation of SOI Substrates by Positron Annihilation
• Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting

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