Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions

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概要

• 論文の詳細を見る

• We have developed a novel Si-on-insulator fabrication technique in which light ions, such as H+ and He^+, are implanted into a Si substrate instead of 0+ implantation in the SIMOX (separation by implanted oxygen) process. The atmospheric oxygen atoms precipitate at the implantation damage during high temperature annealing in an oxydizing atmosphere. A continuous buried oxide layer was successfully formed in a Si substrate under the appropriate conditions, particularly a slow ramping rate and a high oxygen concentration in the atmosphere for the anneal.

• 社団法人応用物理学会の論文
• 2001-10-15

著者

• Ogura Atsushi

  Silicon Systems Research Laboratories Nec Corp.

• OGURA Atsushi

  Silicon Systems Research Laboratories, NEC Corporation

関連論文

• Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
• Evaluation of SOI Substrates by Positron Annihilation
• Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
• Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
• Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures
• Measurement of As and B Profiles Implanted into SOI Substrates
• Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
• Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions
• Ni Precursor for Chemical Vapor Deposition of NiSi
• Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting

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