Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy

スポンサーリンク

概要

• 論文の詳細を見る

• Defects in silicon-on-insulator wafers fabricated by bonding and H^+ splitting technique (Unibond wafers [Unibond is a registered trademark of SOITEC.]) were characterized by photoluminescence (PL) spectroscopy together with transmission electron microscopy (TEM). PL from the superficial Si layer and that from the supporting substrate were separately analyzed using UV and visible light as an excitation source, respectively. The deep-level PL band appeared around 0.8 eV both in the superficial layer and the substrate with a spectral shape similar to that often observed in oxygen precipitated Si crystals. Correspondingly, TEM observation revealed precipitates and related defects. These results allow us to conclude that the defects in Unibond wafers originate in oxygen precipitation during the two-step annealing in the wafer fabrication process.

• 社団法人応用物理学会の論文
• 1998-10-15

著者

• Tajima Michio

  Institute Of Space And Astronautical Science

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• Ogura Atsushi

  Silicon Systems Research Laboratories Nec Corp.

• KARASAWA Tomoki

  Keio University, Faculty of Science and Technology

• MIZOGUCHI Atsushi

  School of Engineering, Tokai University

• Karasawa Tomoki

  Keio University Faculty Of Science And Technology

• Mizoguchi Atsushi

  School Of Engineering Tokai University

• Ogura Atsushi

  Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan

関連論文

• Fine Structure Due to Donor-Acceptor Pair Luminescence in Compensated Si
• Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
• Deep-Level Luminescence in Czochralski-Grown Silicon Crystals after Long-Term Annealing at 450℃
• Photoquenching and Recovery Effects of EL2 Absorption in GaAs : Optical Properties of Condensed Matter
• Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
• Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
• Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
• Evaluation of SOI Substrates by Positron Annihilation
• Characterization of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement
• Photoluminescence Mapping System Applicable to 300 mm Silicon-on-Insulator Wafers : Instrumentation, Measurement, and Fabrication Technology
• Characterization of Interface in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face
• Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
• Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
• Mapping of Vanadium-Related Luminescence on SiC Wafer at Room Temperature
• Spectral Shape Analysis of Photoluminescence Excitation in Semiconductors
• Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method
• Photoluminescence of Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation
• Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation
• Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
• Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation
• Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures
• Measurement of As and B Profiles Implanted into SOI Substrates
• Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature
• Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
• Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping
• Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
• Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
• Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
• Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se2 Solar Cells
• Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
• Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
• Photoluminescence Imaging of Multicrystalline Si Wafers during HF Etching
• Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions
• Ni Precursor for Chemical Vapor Deposition of NiSi
• Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique
• The Performance of the Lithium-Ion Secondary Cells under Micro-Gravity Conditions—In-Orbit Operation of the Interplanetary Spacecraft 'HAYABUSA'
• Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
• Evaluation of SOI Substrates by Positron Annihilation
• Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting

もっと見る 閉じる

スポンサーリンク