Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-06-20
著者
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Tajima M
Inst. Space And Astronautical Sci. Sagamihara Jpn
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Tajima Michio
Optoelectronics Joint Research Laboratory
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Tajima Michio
Institute Of Space And Astronautical Scienc
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida Koichi
Optoelectronics Joint Research Laboratory
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Ishida K
Taiyo Yuden Co. Ltd.
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IINO Takayuki
Optoelectronics Joint Research Laboratory
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Iino T
Sumitomo Metal Mining Co. Ltd.
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Tajima Michio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo:(present Address) El
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石田 謙司
神戸大学 大学院工学研究科
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