Characteristics of Organic Field Effect Transistors Using Simple Fabricated Nano-Gap Electrode(Fabrication of Organic Nano-devices)(<Special Section>Recent Progress in Organic Molecular Electronics)

概要

論文の詳細を見る
In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5TΩ. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The I_d-V_d characteristics of the similar value as OFETs with micron channel were observed.
社団法人電子情報通信学会の論文
2004-12-01