Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method
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概要
- 論文の詳細を見る
Growth striations in a liquid encapusulated Czochralski (LEC) GaP crystal doped with Te at the concentration of 6×10^<17> cm^<-3> was examined by the 90°-angle light scattering method. The growth striations were manifested as a periodical fluctuation in the scattering intensity along the growth direction in the core region of the crystal. The striations were found to be clearly correlated with chemical etching pattern, periodical Te fluctuation detected by electron-probe X-ray microanalysis and periodical cathodoluminescence signal by Te donor. The origin of the striated scattering pattern is attributed to the periodical distribution of the scattering centers formed by the preferential precipitation of excess Te on grown-in dislocations.
- 社団法人応用物理学会の論文
- 1993-06-15
著者
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Tajima M
Inst. Space And Astronautical Sci. Sagamihara Jpn
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Tajima Michio
Optoelectronics Joint Research Laboratory
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Tajima Michio
Institute Of Space And Astronautical Scienc
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Iizuka Takashi
Fujitsu Laboratories Ltd.:aset Super-fine Sr Lithography Laboratory
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IIZUKA Takashi
The Electrotechnical Laboratory
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OKADA Yasumasa
The Electrotechnical Laboratory
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Iizuka T
Fujitsu Laboratories Ltd.:aset Super-fine Sr Lithography Laboratory
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TAJIMA Michio
The Electrotechnical Laboratory
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Tajima Michio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo:(present Address) El
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