Mapping of Vanadium-Related Luminescence on SiC Wafer at Room Temperature
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概要
- 論文の詳細を見る
The intensity distribution of vanadium-related luminescence is investigated on a 4H SiC wafer. Two-dimensional mapping of the vanadium-related line on the sample at room temperature agrees with the defect image obtained by optical microscopy: the luminescence intensity becomes high around the cracks. The intensity profile measurement at 4.2 K indicates that not only the vanadium-related line but the donor-acceptor pair emission increases the intensity around the crack. This result leads us to suggest that microdefects acting as killer centers for minority carriers are gettered by the cracks, resulting in the formation of a denuded zone around them.
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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TAJIMA Michio
Institute of Space and Astronautical Science/JAXA
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Tajima Michio
Institute Of Space And Astronautical Scienc
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Nakamura Akira
Department ofRespirology, Graduate School of Medicine, Chiba University
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Nakamura Akira
Department Of Biotechnology Graduate School Of Agricultural And Life Sciences The University Of Toky
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NAKATA Toshitake
Ion Engineering Research Institute Corporation
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Inoue Morio
Ion Engineering Research Institute Corporation
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Nakata Toshitake
Ion Engineering Research Institute Co.
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KUMAGAYA Yoshikazu
Department of Physics, Science of University of Tokyo
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Kumagaya Yoshikazu
Department Of Physics Science Of University Of Tokyo:(present Address) Fujitsu Ltd.
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Nakamura Akira
Department Oc Macromolecular Science Faculty Of Science Osaka University
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Nakamura Akira
Department Of Physics Science Of University Of Tokyo
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