Dose Dependence of the Enhancement of Thermal Oxidation for 6H-SiC by 30 keV ^<18>O^+ and ^<20>Ne^+ Irradiation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-11-15

著者

• KITABATAKE Makoto

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.

• KIDO Yoshiaki

  Department of Nuclear Engineering,Faculty of Engineering,Kyoto University

• YONEDA Tomoaki

  Ion Engineering Research Institute Corporation

• NAKATA Toshitake

  Ion Engineering Research Institute Corporation

• Kido Yoshiaki

  Department Of Internal Medicine Division Of Diabetes Metabolism And Endocrinology Kobe University Gr

• Nakata Toshitake

  Ion Engineering Research Institute Co.

• Kido Yoshiaki

  Department Of Physics Ritsumeikan University

• Kitabatake Makoto

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Kitabatake Makoto

  Central Research Lab. Matsushita Electr. Ind. Co.

• Kido Yoshiaki

  Department of Physics, Ritsumeikan University

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• Dose Dependence of the Enhancement of Thermal Oxidation for 6H-SiC by 30 keV ^O^+ and ^Ne^+ Irradiation
• Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer
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