Surface Cesium Concentration and Secondary Ion Emission from Si1-xGex Bombarded by Cs+

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概要

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• Depth profiles of cesium (Cs) are determined precisely by high-resolution medium energy ion scattering (MEIS) for a-Si1-xGex:H films bombarded by Cs+ ions in secondary ion mass spectroscopy (SIMS). The useful yields of secondary positive and negative ions by Cs+ bombardment are found to be related to the surface Cs concentration. The present MEIS analysis reveals that the surface Cs concentration decreases with increasing Ge composition. The useful yields of secondary H- and Si- ions are enhanced exponentially, whereas secondary positive ion yields of Cs+ and SiCs+ are reduced almost exponentially with increasing Ge composition. Such behaviors are responsible for the change in the work function dependent upon the surface Cs concentration. It is also found that the useful yields of HCs2+ and SiCs2+ increase with increasing surface Cs concentration. This suggests a two-step process, $\text{M$^{-}$}(\text{H$^{-}$}, \text{Si$^{-}$})+\text{Cs$^{+}$}+\text{Cs$^{+}$}\rightarrow\text{MCs$^{0}$}+\text{Cs$^{+}$}\rightarrow\text{MCs$_{2}$$^{+}$}$, after leaves the surface. The mechanism of enhancing or reducing secondary ion yields is discussed in detail in terms of the surface Cs concentration.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Kido Yoshiaki

  Department Of Internal Medicine Division Of Diabetes Metabolism And Endocrinology Kobe University Gr

• Mikami Akira

  Mobile Energy Company, SANYO Electric Co., Ltd., Kobe 651-2242, Japan

• Kido Yoshiaki

  Department of Physics, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

• Okazawa Tetsuaki

  Kansai Center, National Institute of Advanced Industrial Science and Technology, Ikeda, Osaka 563-8577, Japan

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