Surface-Structure-Controlled Heteroepitaxial Growth of 3C-SiC(001)3 × 2 on Si(001): Simulations and Experiments

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概要

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• Mechanistic reaction paths for the heteroepitaxial growth of 3C-SiC on carbonized Si(001) were investigated using a combination of molecular dynamics (MD) simulations and molecular beam epitaxy (MBE) experiments. The stable Si-terminated 3C-SiC(001) surface was found by MD to exhibit a 2 × 1 reconstruction similar to the Si(001)2 × 1. The addition of Si adatoms on SiC(001)2 × 1 results in the formation of a series of missing-dimerrow type reconstructions of h × 2 where h = ・・・, 7, 5, 3 with increasing Si adatom coverage. The most stable surface structure is SiC(001)-Si3 × 2 with a dangling bond density of 0.67 per SiC(001)1 × 1 unit cell. Analyses by transmission electron microscopy, X-ray diffraction, and electron spin resonance of 1000-Å-thick SiC(001) heteroepitaxial layers grown by MBE on miscut Si(001)-4°[110] at 1050℃ as a function of incident C/Si flux ratio J_C/J_<Si> showed that the highest quality layers were obtained by surface-structure-controlled epitaxy in which in-situ reflection high-energy electron diffraction was used as a feedback signal to adjust J_C/J_<Si>, during growth to maintain a 3 × 2 surface reconstruction. A model involving asymmetric growth kinetics parallel and perpendicular to step edges is presented.

• 社団法人応用物理学会の論文
• 1996-10-15

著者

• Kitabatake Makoto

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Kitabatake Makoto

  Central Research Lab. Matsushita Electr. Ind. Co.

• GREENE Joe

  Materials Science Dept., Coordinated Science Laboratory, and Materials Research Laboratory, Universi

• Greene Joe

  Materials Science Dept. Coordinated Science Laboratory And Materials Research Laboratory University

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• Surface-Structure-Controlled Heteroepitaxial Growth of 3C-SiC(001)3 × 2 on Si(001): Simulations and Experiments

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