Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
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概要
- 論文の詳細を見る
Expansion of Shockley stacking faults in 4H-SiC achieved by the radiation-enhanced glide of 30°-Si(g) partial dislocations has been investigated by photoluminescence experiments. The enhancement rate of the dislocation glide that was induced by light illumination in the present study was found to be governed directly by the light intensity, not by the photogenerated carriers. This fact indicates that the glide enhancement in 4H-SiC is not explained by the widely speculated mechanism that the electronic energy released on recombination of photoexcited electron--hole pairs is utilized to assist the dislocation glide. A photoionization of dislocations is proposed to be the cause of the glide enhancement.
- 2012-09-25
著者
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Itoh Kohei
School Of Fundamental Science And Technology Keio University
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Tajima Michio
Institute Of Space And Astronautical Scienc
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Maeda Koji
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo:the Institute For Solid
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Sato Yuki
Department Of Anesthesiology Jichi Medical School
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HIRANO Rii
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency
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Hirano Rii
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara 252-5210, Japan
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Tajima Michio
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara 252-5210, Japan
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TSUCHIDA Hideyuki
Central Research Institute of Electric Power Industry
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Sato Yuki
Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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ITOH Kohei
School of Fundamental Science and Technology and CREST-JST, Keio University
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Itoh Kohei
School of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan
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MAEDA Koji
Department of Agricultural Chemistry, University of Osaka Prefecture
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