Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter

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概要

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• The interstitial-type {311} planar defects introduced in wafers synthesized by separation by implanted oxygen (SIMOX) have been investigated by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). Deep-level PL of low-dose SIMOX wafers with doses of 2, 4, and 6×10^<17> cm^<-2> were analyzed under various excitations with different penetration depths. In as-implanted wafers, the 0.903 eV line associated with the {311} defects appeared in the region below the oxygen implanted layer. Correspondingly, TEM observation revealed rod-like defects due to the {311} defects in the same region. After annealing, the 0.903eV line disappeared and dislocation-related lines became visible. These results indicate that the {311} defects are generated below the implanted layer and are extended to dislocations after annealing.

• 社団法人応用物理学会の論文
• 2001-06-01

著者

• TAJIMA Michio

  Institute of Space and Astronautical Science/JAXA

• Tajima Michio

  Institute Of Space And Astronautical Scienc

• IBUKA Shigeo

  Institute of Space and Astronautical Science

• Ogura Atsushi

  Silicon Systems Research Laboratories Nec Corporation

• Tokumaru Yozo

  Faculty Of Science And Engineering Chuo University

• TAKIGUCHI Jun-ichi

  Institute of Space and Astronautical Science

• Ogura Atsushi

  Silicon Systems Research Laboratories Nec Corp.

• Takiguchi Jun-ichi

  Institute Of Space And Astronautical Science:faculty Of Science And Engineering Chuo University

• Ogura Atsushi

  Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan

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