Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures
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概要
- 論文の詳細を見る
We used X-ray diffraction to quantitatively measure the strain induced by the local oxidation of silicon in thin-film silicon-on-insulator (SOI) wafers. In the samples of bonded SOI wafers thinned by plasma-assisted chemical etching, the reflection peaks of the top Si layer and the base Si substrate could be measured independently because the orientation of these lattice planes differs slightly. Moreover, the strain near the surface region could be measured because the top Si layer is only 200-nm thick. We show that the strain in the SOI wafers is more than one order of magnitude larger than that in the bulk wafers when the device region is fully isolated by the surrounding SiO_2.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corporation
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corp.
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Kimura Shigeru
Silicon Systems Research Laboratories Nec Corporation
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Ogura Atsushi
Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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- Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
- Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
- Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures
- Measurement of As and B Profiles Implanted into SOI Substrates
- Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
- Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions
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- Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting