Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping
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概要
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The effectiveness of room-temperature photoluminescence (PL) mapping was demonstrated for nondestructive detection of in-grown stacking faults in off-axis 4H-SiC bulk substrates and epitaxial layers. The use of a deep-UV light excitation is essential to detect the stacking fault related intensity pattern in the bulk substrates because of its shallow penetration depth. A bar-shaped PL intensity pattern agreed well with the etch-pit pattern due to the stacking faults in the bulk substrate. The expansion length of the bar pattern from a bulk substrate to an epitaxial layer corresponded to the projected width of basal plane in the epitaxial layer. These results allowed us to analyze the stacking faults propagated from the bulk substrate to the epitaxial layer.
- 2007-10-25
著者
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Tajima Michio
Institute Of Space And Astronautical Scienc
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Shiomi Hiromu
Sixon Ltd.
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Hayashi Toshihiko
Sixon Ltd.
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Kinoshita Hiroyuki
SiXON Ltd., 47 Umezutakase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Hayashi Toshihiko
SiXON Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Hoshino Norihiro
Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan
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Nishiguchi Taro
SiXON Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Ikeda Keiichi
SiXON Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Tajima Michio
Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan
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Kinoshita Hiroyuki
SiXON Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Shiomi Hiromu
SiXON Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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