Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy
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概要
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Highly spatial resolved photoluminescence (PL) characterization of intra-grain defects in recent multicrystalline Si wafers for solar cells was performed. Comparison of band-edge PL intensity mapping with minority carrier lifetime mapping on a whole wafer showed that low PL intensity regions correspond to short lifetime regions. PL microscopic mapping revealed that micron-sized defects are present in these regions. We also confirmed that grain boundaries are not active recombination centers. Low-temperature PL spectra were investigated, and dislocation-related lines, D1–D4, were observed only in the defect areas. We consider that these defects are ascribable to dislocations decorated with heavy metals and responsible for great degradation of lifetime.
- 2006-07-25
著者
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Tajima Michio
Institute Of Space And Astronautical Scienc
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Inoue Masaaki
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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Sugimoto Hiroki
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Ogura Atsushi
Meiji Univ. Kawasaki Jpn
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Ohshita Yoshio
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
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Tajima Michio
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan
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Sugimoto Hiroki
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan
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Ogura Atsushi
Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Inoue Masaaki
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan
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