Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Tris-diethylamino-silane SiH(NEt2)3 is stable and does not decompose by itself below 550°C. However, it easily decomposes even at 150°C with the addition of tetrakis-diethylamido-hafnium (Hf(NEt2)4). This enhancement of silicon source decomposition determined the properties of Hf1-xSixO2 film, when the Hf1-xSixO2 film is deposited by CVD using the Hf(NEt2)4/SiH(NEt2)3/O2 gas system. Then 550°C, the Si concentration is almost constant and the ratio of N to Si is almost one independent of the deposition temperature. However, above 550°C, the Si concentration increases and the ratio of N to Si decreases, since SiH(NEt2)3 is thermally decomposed by itself.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-01
著者
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Machida Hideaki
Tri Chemical Laboratories Inc.
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Ogura Atsushi
Nec Corp. Microelectronics Research Laboratories
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Kada Takeshi
Tri Chemical Laboratories Inc.
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Ishikawa Masato
Tri Chemical Laboratories Inc.
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Ogura Atsushi
NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ishikawa Masato
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Ishikawa Masato
TRI Chemical Laboratory Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Kada Takeshi
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Kada Takeshi
TRI Chemical Laboratory Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
TRI Chemical Laboratory Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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