Control of Thickness Variation in Si-on-Insulator Bonded Wafers by Applying Voltage during KOH Etching

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概要

• 論文の詳細を見る

• A new thinning technique is developed to control thickness variation in 81-on-insulator (SOI) bonded wafers. During KOH etching, voltage is applied between the supporting substrate and the enchant. Excellent SOI thickness variation of less than ±0.1 μm is achieved by etching 4±0.5 μm thick, 150 mmφSOI bonded wafers. The resulting film thickness after etching is controlled from 0.8 to 2.6 μm by changing the applied voltage from 50 to 75 V.

• 社団法人応用物理学会の論文
• 1996-01-15

著者

• Ogura Atsushi

  Nec Corp. Microelectronics Research Laboratories

関連論文

• Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching: Improvement of Thickness Variation by Reducing Leakage Current
• Control of Thickness Variation in Si-on-Insulator Bonded Wafers by Applying Voltage during KOH Etching
• Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition

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