Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching: Improvement of Thickness Variation by Reducing Leakage Current

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Ogura Atsushi

  Nec Corporation

• Ogura Atsushi

  Nec Corporation Microelectronics Research Laboratories

• Ogura Atsushi

  Nec Corp. Microelectronics Research Laboratories

関連論文

• Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching: Improvement of Thickness Variation by Reducing Leakage Current
• Control of Thickness Variation in Si-on-Insulator Bonded Wafers by Applying Voltage during KOH Etching
• Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition

スポンサーリンク