Novel Precursor for Development of Si–C2H4–Si Networks in SiCH for Application as a Low-$k$ Cap Layer beyond 22 nm Nodes

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概要

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• SiCH films are a potentially very useful low-$k$ cap layer for covering Cu trenches in ultralarge-scale integration (ULSI) devices. To induce Si–C2H4–Si networks in SiCH film structures, 1,1-divinyl silacyclopentane (DVScP) and 5-silaspiro-[4,4]-nonane (SSN) were designed and prepared. Isobutyl trimethyl silane (iBTMS) and diisobutyl dimethyl silane (DiBDMS) were also designed to form Si–CH2–Si networks in the SiCH molecular structure. SiCH films were formed by plasma-enhanced chemical vapor deposition (PECVD), for use as a low-$k$ cap layer and a Cu diffusion barrier on top of the Cu trenches. We demonstrated additional Si–C2H4–Si networks that can effectively suppress Cu diffusion in SiCH low-$k$ barrier films with a reduced $k$-value of 3.1.

• 2010-05-25

著者

• Kada Takeshi

  Tri Chemical Laboratories Inc.

• Yoshi Ohashi

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Satoshi Hasaka

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Tajima Nobuo

  National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan

• Shuji Nagano

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Shimizu Hideharu

  Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

• Nobuo Tajima

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

• Kada Takeshi

  TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan

関連論文

• Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
• Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
• Novel Precursor for Development of Si–C2H4–Si Networks in SiCH for Application as a Low-$k$ Cap Layer beyond 22 nm Nodes
• Proposal of New Precursors for Plasma-Enhanced Chemical Vapor Deposition of SiOCH Low-$k$ Films with Plasma Damage Resistance
• High-Etching-Selectivity Barrier SiC ($k
• Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
• Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects
• Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition
• Ni Precursor for Chemical Vapor Deposition of NiSi
• Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique
• Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel

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