Shimizu Hideharu | Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

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概要

• 同名の論文著者
• Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japanの論文著者

関連著者

• Shimizu Hideharu

  Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

• Tajima Nobuo

  National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan

• Kada Takeshi

  TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

• Kada Takeshi

  Tri Chemical Laboratories Inc.

• Nagano Shuji

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• Shimogaki Yukihiro

  Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo

• Tajima Nobuo

  First Principles Simulation Group Computational Materials Science Center National Institute For Mate

• Yoshi Ohashi

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Satoshi Hasaka

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Shuji Nagano

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Momose Takeshi

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 163-8656, Japan

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Shimizu Hideharu

  Taiyo-Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan

• Nobuo Tajima

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

• Tajima Nobuo

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

• Kada Takeshi

  Tri Chemical Laboratories Inc., Uenohara, Yamanashi 409-0112, Japan

• Shimogaki Yukihiro

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 163-8656, Japan

• Sakoda Kaoru

  Taiyo-Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan

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著作論文

• Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
• Novel Precursor for Development of Si–C2H4–Si Networks in SiCH for Application as a Low-$k$ Cap Layer beyond 22 nm Nodes
• Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
• Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

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