Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

スポンサーリンク

概要

• 論文の詳細を見る

• Cobalt film with tungsten addition [Co(W)] has the potential to be an effective single-layered barrier/liner in interconnects awing to its good adhesion with Cu, a lower resistivity than TaN, and an improved barrier property with respect to cobalt films. Our previous study on chemical-vapor-deposited (CVD) Co(W) using carbonyl precursors clarified, however, that WO3 included in the films increased the resistivity. In this current study, to reduce the resistivity of Co(W), oxygen-free Co(W) films were fabricated from two oxygen-free precursors, bis(cyclopentadienyl)cobalt and bis(cyclopentadienyl)tungstendihydride, by atomic layer deposition (ALD) using NH2 radicals generated using a hot filament. Results revealed that (a) W concentration in ALD-Co(W) could be controlled by adjusting the gas-feed sequences, (b) W addition improved the barrier property of ALD-Co(W) against Cu diffusion, (c) diffusion of Cu into ALD-Co(W) had a high activation energy, 2.0 eV, indicating interstitial diffusion, and (d) ALD-Co(W) consisted mainly of an amorphous-like phase, which is consistent with the high activation energy of Cu diffusion.

• 2012-05-25

著者

• Shimizu Hideharu

  Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

• Momose Takeshi

  Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 163-8656, Japan

• Shimizu Hideharu

  Taiyo-Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• Sakoda Kaoru

  Taiyo-Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

関連論文

• Deposition of Cu-Ag Alloy Film by Supercritical Fluid Deposition
• Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
• Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
• Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
• Conformal Deposition and Gap-Filling of Copper into Ultranarrow Patterns by Supercritical Fluid Deposition
• Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
• Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
• High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
• Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
• Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
• Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
• Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
• Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
• Novel Precursor for Development of Si–C2H4–Si Networks in SiCH for Application as a Low-$k$ Cap Layer beyond 22 nm Nodes
• Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
• Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
• Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
• Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
• High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
• Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
• Source Gas Dependency of Amorphous Fluorinated Carbon Film Properties Prepared by Plasma Enhanced Chemical Vapor Deposition Using C4F8, C4F6, and C5F8 Gases
• Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition
• Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
• Step Coverage Analysis for Hexamethyldisiloxane and Ozone Atmospheric Pressure Chemical Vapor Deposition
• TiN Films Prepared by Flow Modulation Chemical Vapor Deposition using TiCl4 and NH3
• Adhesion Characteristics between Chemical Vapor Deposited Cu and TiN Films : Aspects of Process Integration
• Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4 and NH3 by Introducing Ar Purge Time
• Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
• Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
• ACTIVATION MECHANISM OF AMORPHOUS NixZr100-x ALLOYS DURING CO/H2 REACTION AND PREPARATION METHOD OF POROUS AMORPHOUS ALLOY CATALYSTS
• Nucleation of W during Chemical Vapor Deposition from WF6 and SiH4
• Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
• Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects
• Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-$k$ Films
• Surface Modification of SiO2 Microchannels with Biocompatible Polymer Using Supercritical Carbon Dioxide
• In Situ Observation of Initial Nucleation and Growth of Chemical Vapor Deposition of Copper by Surface Reflectivity Measurement
• Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
• The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
• Material Consideration on Ta, Mo, Ru, and Os as Glue Layer for Ultra Large Scale Integration Cu Interconnects
• Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy
• Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
• Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique
• In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper
• Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
• Effect of Partial Pressure of TiCl4 and NH3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity
• Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
• Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization
• Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution
• Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
• Step Coverage Quality of Cu Films by Supercritical Fluid Deposition Compared with Chemical Vapor Deposition
• Fabrication of Hf(C)N Films on SiO2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
• Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
• Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
• Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
• Kinetics of TiN Chemical Vapor Deposition Process using TiCl4 and NH3 for ULSI Diffusion Barrier Applications: Relationship between Step Coverage and NH3 Partial Pressure

もっと見る 閉じる

スポンサーリンク