Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The delay due to the dielectric constant of an interlayer film results in the limited performance of very large-scale integrated circuits (VLSI). One solution to this problem is the use of a low-dielectric-constant interlayer film such as F-doped SiO2. We were able to obtain F-doped SiO2 films with dielectric constants as low as 2.3 and good step coverage by adding CF4 to SiH4/N2O plasma-enhanced chemical vapor deposition (PECVD). Our study focuses on the mechanism of the decrease in the dielectric constant and that of process improvement. It appears that a decrease in the dielectric constant is due to the decrease in the ionic polarization. The change in the Si–O stretching mode due to CF4 addition seems to be the most important factor in the decrease in the dielectric constant. The improvement of the step coverage and the decrease in the film growth rate are due to the decrease in the sticking probability of the film-forming species.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• NAKANO Yoshiaki

  Department of Surgery, NTT West Osaka Hospital

• Lim S

  Advanced Products Res. And Dev. Lab. Tx Usa

• Lim Sang

  Department Of Chemical System Engineering University Of Tokyo:(present Address)department Of Electri

• TADA Kunio

  Department of Electronic Engineering, The University of Tokyo

• SHIMOGAKI Yukihiro

  Department of Materials Engineering, The University of Tokyo

• Tada Kunio

  Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo

• Nakano Yoshiaki

  Research Center For Advanced Science And Technology Univ. Of Tokyo

• Nakano Yoshiaki

  Graduate School Of Engineering The University Of Tokyo

• Nakano Y

  Research Center For Advanced Science And Technology The University Of Tokyo

• KOMIYAMA Hiroshi

  Department of Chemical System Engineering, The University of Tokyo

• Nakano Yoshiaki

  Department Of Surgery Ntt West Osaka Hospital

• Shimogaki Yukihiro

  Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo

• Komiyama H

  Department Of Chemical System Engineering School Of Engineering University Of Tokyo

• Komiyama Hiroshi

  Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo

• Shimogaki Y

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Lim Sang

  Department Of Chemical Engineering Sungkyunkwan University

• Nakano Yoshiaki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Tada Kunio

  Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo

• Lim Sang

  Department Of Anesthesiology And Pain Medicine Korea University Guro Hospital

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

• Tada Kunio

  Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

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